About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3401A


MOSFET P Trench 30V 4A 1.3V @ 250uA 44 mΩ @ 4.3A,10V SOT-23-3L RoHS
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Alpha & Omega 482728
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AUD 0.059
Multiples of: 10

4 A  P    1.4 WSurface Mount      Enhancement  
DMG2305UX-13


MOSFET P-Ch ENH FET -20V 52mOhm -5.0V
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Diodes Incorporated 475300
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AUD 0.0544
Multiples of: 10000

- 4.2 A- 20 V52 mOhmsP - Channel8 V- 0.9 V- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Reel   10.2 nCEnhancement  
BVSS84LT1G


MOSFET PFET 50V 130MA 10.0
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ON Semiconductor 468683
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AUD 0.1538
Multiples of: 1

130 mA- 50 V10 OhmsP - Channel20 V - 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Reel   2.2 nC   
JSM2301S


20V 2.3A 90mΩ@4.5V,2.8A 350mW 1V@250uA 55pF@10V P Channel 405pF@10V 5.4nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI 467385
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AUD 0.0091
Multiples of: 50

                   
SI2302


20V 3A 1W 45mΩ@4.5V,3A N Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 463997
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AUD 0.0162
Multiples of: 50

                   
STP60NF06


Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; TO220-3
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STMicroelectronics 461613
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AUD 0.8168
Multiples of: 1

                   
SIR182DP-T1-RE3


MOSFET 60V Vds 20V Vgs PowerPAK SO-8
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Vishay 459780
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AUD 0.9038
Multiples of: 1

60 A60 V2.3 mOhmsN - Channel 3.6 V- 55 C+ 150 C69.4 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V42.2 nC  Trenchfet, Powerpak
SI3127DV-T1-GE3


MOSFET P-Channel 60-V (D-S)
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Vishay 452719
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AUD 0.2282
Multiples of: 1

- 5.1 A- 60 V146 mOhmsP - Channel - 1 V- 55 C+ 150 C4.2 WSmd/SmtTSOP - 6ReelSi1 Channel+/- 20 V20 nCEnhancement Trenchfet
2N7002ET7G


MOSFET NFET SOT23 60V 115MA 7MO
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ON Semiconductor 447294
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AUD 0.0372
Multiples of: 1

310 mA60 V2.5 OhmsN - Channel 1 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.81 nCEnhancement  
ZXMN10A07FTA


N-Channel 100 V 700mA (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 413220
Ships to you
between Fri. 12 Jul to Thu. 18 Jul Calender.png

AUD 0.1754
Multiples of: 3000

800 mA100 V700 mOhmsN - channel 2 V- 55 C+ 150 C806 mWSmd/smtSOT - 23ReelSi1 Channel10 V2.9 nCEnhancement  
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