DMG2305UX P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low On-Resistance BV R Max Package DSS DS(ON) T = +25C A Low Input Capacitance -5.0A 52m V = -4.5V GS Fast Switching Speed -20V SOT23 100m V = -2.5V -3.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description An Automotive-Compliant Part is Available Under Separate This MOSFET is designed to minimize the on-state resistance Datasheet (DMG2305UXQ) (R ), yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT23 Backlighting Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.009 grams (Approximate) D D G S G S Top View Internal Schematic Top View Ordering Information (Note 4) Part Number Compliance Case Packaging DMG2305UX-7 Standard SOT23 3,000/Tape & Reel DMG2305UX-13 Standard SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG2305UX Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -4.2 A I A D State -3.3 T = +70C A Continuous Drain Current (Note 5) V = -4.5V GS T = +25C -5.0 A t<10s A I D -4.0 T = +70C A Pulsed Drain Current (Note 6) I -10 A DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1.4 W D Steady State 90 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 64 C/W Thermal Resistance, Junction to Case (Note 7) R 33 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1.0 A V = -20V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.5 -0.9 V V = V , I = -250A GS(TH) DS GS D 40 52 V = -4.5V, I = -4.2A GS D Static Drain-Source On-Resistance R 52 100 m V = -2.5V, I = -3.4A DS(ON) GS D 68 200 V = -1.8V, I = -2A GS D Forward Transfer Admittance 9 s Y V = -5V, I = -4A FS DS D DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 808 pF C ISS V = -15V, V = 0V DS GS Output Capacitance 85 pF C OSS f = 1.0MHz Reverse Transfer Capacitance 77 pF C RSS Gate Resistance R 15.2 V = 0V, V = 0V, f = 1.0MHz g GS DS SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Q 10.2 nC g V = -4.5V, V = -4V, GS DS Gate-Source Charge Q 1.3 nC gs I = -3.5A D Gate-Drain Charge Q 2.2 nC gd Turn-On Delay Time t 10.8 ns D(ON) Turn-On Rise Time 13.7 ns t V = -4V, V = -4.5V, R DS GS Turn-Off Delay Time 79.3 ns R = 6, I = -1A t g D D(OFF) Turn-Off Fall Time 34.7 ns t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMG2305UX November 2016 Diodes Incorporated www.diodes.com Document number: DS36196 Rev. 6 - 2