About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Package / Case
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN65D8LFB-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K
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Diodes Incorporated 368600
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AUD 0.0618
Multiples of: 10000

400 mA60 V3 OhmsN - Channel20 V2 V- 55 C+ 150 C430 mWSmd/SmtX1 - DFN1006 - 2ReelSi1 Channel10 V Enhancement  
FDD8874


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 361313
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AUD 0.9423
Multiples of: 1

116 A30 V5.1 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
CJ3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 65 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Changjiang 347788
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AUD 0.0349
Multiples of: 10

                   
BSD235CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
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Infineon 347556
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AUD 0.1504
Multiples of: 1

            Optimos 2      
BSS84P H6327


MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon 343329
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AUD 0.0619
Multiples of: 1

170 mA60 V5.8 OhmsP - Channel 2 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT23 - 3ReelSi1 Channel20 V1.5 nCEnhancement  
BSD235NH6327XTSA1


Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
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Infineon 342634
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AUD 0.1345
Multiples of: 1

            Optimos 2      
SI2302-HXY


20V 2.8A 55mΩ@4.5V,2.8A 0.9W N Channel SOT-23 MOSFETs ROHS
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HXY MOS 339357
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AUD 0.0112
Multiples of: 50

                   
BSS138K-13


Trans MOSFET N-CH 50V 0.31A 3-Pin SOT-23 T/R
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Diodes Incorporated 337972
Ships to you
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AUD 0.0548
Multiples of: 1

310 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C0.54 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V0.95 nCEnhancement  
CJ3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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Changjiang 336602
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AUD 0.0463
Multiples of: 10

                   
TP0610K-T1-E3


MOSFET -60V Vds 20V Vgs SOT-23
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Vishay 336518
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AUD 0.2123
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 (TO - 236)Reel      Trenchfet
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