About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HX2301A


MOSFET P Trench 20V 2.5A 1V @ 250uA 130 mΩ @ 2.5A,4.5V SOT-23 RoHS
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hengjiaxing 526970
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AUD 0.0125
Multiples of: 50

                   
FDV303N


25V 680mA 450mO@4.5V,500mA 350mW N Channel SOT-23 MOSFETs ROHS
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ON Semiconductor 523800
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AUD 0.0762
Multiples of: 3000

680 mA25 V450 mOhmsN - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V Enhancement  
DMG7401SFGQ-7


MOSFET P-Ch Enh Mode FET 30Vdss 25Vgss
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Diodes Incorporated 522146
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AUD 0.3878
Multiples of: 1

- 9.8 A- 30 V9 mOhmsP - Channel - 3 V- 55 C+ 150 C940 mWSmd/SmtPowerdi3333 - 8ReelSi1 Channel+/- 25 V41 nCEnhancementAec - Q101 
2N7002K


New Quadratic Unclassified Data SOT-23 RoHS
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Microdiode Electronics 516839
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AUD 0.0118
Multiples of: 30

                   
PMZB290UNE2YL


N-Channel 20 V 1.2A (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3
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Nexperia 514100
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AUD 0.0554
Multiples of: 10000

1.2 A20 V320 mOhmsN - Channel 450 mV- 55 C+ 150 C715 mWSmd/SmtDFN1006B - 3ReelSi1 Channel4.5 V0.8 nCEnhancement  
DMN6140L-13


Diodes Incorporated MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A
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Diodes Incorporated 504400
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AUD 0.085
Multiples of: 10000

2.3 A60 V140 mOhmsN - Channel 3 V- 55 C+ 150 C1.3 WSmd/SmtSOT23Reel-1 Channel+/- 20 V8.6 nCEnhancement  
BSS316NH6327XTSA1


Infineon Technologies MOSFET N-Ch 30V 1.4A SOT-23-3
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Infineon 494700
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AUD 0.065
Multiples of: 3000

1.4 A30 V119 mOhmsN - Channel 1.6 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 3Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
SQ2308CES-T1_BE3


MOSFET N-CHANNEL 60V D-S
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Vishay 492401
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AUD 0.3238
Multiples of: 1

           Cut Tape       
FDMS8333L


Fairchild Semiconductor MOSFET NChan 40V 76A 69W PowerTrench MOSFET
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ON Semiconductor 483060
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AUD 0.8216
Multiples of: 3000

76 A40 V3.1 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C69 WSmd/SmtPOWER - 56 - 8ReelSi 20 V46 nC  Powertrench
SPD15P10PLGBTMA1


Infineon Technologies MOSFET P-Ch -100V 15A DPAK-2
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Infineon 2425
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AUD 1.32
Multiples of: 2500

15 A100 V200 mOhmsP - Channel 2 V- 55 C+ 175 C128 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V47 nCEnhancement  
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