About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDS331N


mosfet n trench 20v 1.3a 1v @ 250ua 160 m @ 1.5a,4.5v ssot-3 rohs
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ON Semiconductor 608190
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AUD 0.218
Multiples of: 3000

   N Channel               
SI2312BDS-T1-GE3


N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 582851
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AUD 0.2813
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel      Trenchfet
2N7002-T1-GE3


MOSFET 60V 115mA 0.2W 7.5ohm @ 10V
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Vishay 581010
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AUD 0.1203
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3ReelSi      
SI1416EDH-T1-GE3


30V 3.9A 58mO@10V,3.1A 2.8W N Channel SC-70-6(SOT-363) MOSFETs ROHS
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Vishay 572899
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AUD 0.1698
Multiples of: 1

3.9 A30 V58 mOhmsN - Channel12 V1.4 V- 55 C+ 150 C2.8 WSmd/SmtSC - 70 - 6ReelSi1 Channel10 V7.5 nCEnhancement Trenchfet
ZXMN2A01FTA


N-Channel 20 V 1.9A (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 558720
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AUD 0.1764
Multiples of: 3000

2.2 A20 V120 mOhmsN - channel 700 mV- 55 C+ 150 C625 mWSmd/smtSOT - 23ReelSi1 Channel4.5 V3 nCEnhancement  
SQS401ENW-T1_GE3


MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
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Vishay 557373
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AUD 0.6769
Multiples of: 1

16 A40 V20 mOhmsP - Channel 2.5 V- 55 C+ 175 C62.5 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 V21.2 nCEnhancementAec - Q101Trenchfet
2N7002A-TP


MOSFET N-Ch 60Vds 30Vgs 40Vgsm 115mA 300mW
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Micro Commercial Components (MCC) 549990
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AUD 0.0202
Multiples of: 3000

                   
2N7002


MOSFET N Trench 60V 115mA 2.5V @ 250uA 7.5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Changjiang 539246
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AUD 0.0158
Multiples of: 50

                   
BSS84PW H6327


Infineon Technologies MOSFET P-Ch -60V 150mA SOT-323-3
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Infineon 528833
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AUD 0.0619
Multiples of: 1

- 150 mA- 60 V8 OhmsP - Channel+/- 20 V- 1.5 V- 55 C+ 150 C300 mWSmd/SmtPG - SOT - 323Reel-1 Channel20 V1 nCEnhancementAec - Q101 
SQ2389ES-T1_BE3


MOSFET P-CHANNEL 40V D-S
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Vishay 527797
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AUD 0.3839
Multiples of: 1

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