About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS84


Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.36W; SOT23
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ON Semiconductor 494700
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AUD 0.0712
Multiples of: 3000

   P Channel               
PMV55ENEAR


MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/
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Nexperia 388658
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AUD 0.1752
Multiples of: 1

3.1 A60 V60 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.19 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V12.7 nCEnhancement  
STB75NF75LT4


Transistor: N-MOSFET; unipolar; 75V; 70A; 300W; D2PAK
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STMicroelectronics 388000
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AUD 1.176
Multiples of: 1000

            Supermesh      
2N7002 TR


MOSFET N-Ch 60V .2A
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Central Semiconductor 386609
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AUD 0.1654
Multiples of: 1

115 mA60 V3.7 OhmsN - Channel 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel40 V592 pCEnhancement  
DMN3023L-7


MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
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Diodes Incorporated 381210
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AUD 0.1232
Multiples of: 3000

6.2 A30 V25 mOhmsN - Channel 800 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V18.4 nCEnhancement  
SQ2315ES-T1_BE3


MOSFET P-CHANNEL 12V D-S
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Vishay 376974
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AUD 0.3012
Multiples of: 1

           Cut Tape       
DMP2104LP-7


20V 1.5A 500mW 150mO@4.5V,900mA P Channel X1-DFN1411-3 MOSFETs ROHS
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Diodes Incorporated 375187
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AUD 0.1645
Multiples of: 1

1.5 A20 V150 mOhmsP - Channel 450 mV- 55 C+ 150 C500 mWSmd/SmtDFN1411 - 3Cut TapeSi1 Channel4.5 V Enhancement  
DMP3099L-7


MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
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Diodes Incorporated 370904
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AUD 0.0482
Multiples of: 10

3.8 A30 V65 mOhmsP - Channel 1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V11 nCEnhancement  
DMN53D0LDW-7


MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
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Diodes Incorporated 370544
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AUD 0.0655
Multiples of: 1

360 mA50 V1.6 OhmsN - Channel 800 mV- 55 C+ 150 C310 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel10 V0.6 nC , 0.6 nCEnhancement  
NVTR01P02LT1G


ON Semiconductor MOSFET PFET 20V 0.160R TR
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ON Semiconductor 369570
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AUD 0.1376
Multiples of: 1

- 1.3 A- 20 V220 mOhmsP - Channel     Smd/SmtSOT - 23 - 3ReelSi    Aec - Q101 
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