About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002BKS,115


Mosfet Array 2 N-Channel (Dual) 60V 300mA 295mW Surface Mount 6-TSSOP
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Nexperia 6899610
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AUD 0.078
Multiples of: 3000

300 mA60 V2.8 OhmsN - Channel    830 mWSmd/SmtSOT - 23 - 3Reel       
BSS123-7-F


100V 170mA 300mW 6O@10V,170mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 4717110
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AUD 0.0248
Multiples of: 3000

170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
2N7002E-7-F


60V 250mA 3O@10V,250mA 370mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 3672420
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AUD 0.04
Multiples of: 3000

300 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V223 pCEnhancement  
DMN10H120SFG-13


Diodes Incorporated MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
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Diodes Incorporated 3206820
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AUD 0.4268
Multiples of: 3000

3.8 A100 V68 mOhmsN - Channel 1.5 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8Tape And ReelSi1 Channel20 V10.6 nCEnhancement  
2N7002KW-TP


MOSFET N-Ch Enh FET 60Vds 20Vgs 340mA 200mW
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Micro Commercial Components (MCC) 2910000
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AUD 0.03
Multiples of: 3000

340 mA60 V5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V    
BSC046N02KS G


MOSFET OptiMOS2 PWR TRANS 20V 80A
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Infineon 2910000
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AUD 0.5376
Multiples of: 5000

19 A20 V4.6 mOhmsN - Channel  - 55 C+ 150 C2.8 WSmd/SmtTDSONReelSi1 Channel12 V Enhancement Optimos
SI1022R-T1-GE3


MOSFET 60V Vds 20V Vgs SC75A
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Vishay 2895450
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AUD 0.195
Multiples of: 3000

330 mA60 V2.25 OhmsN - Channel 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 416 - 3Cut TapeSi1 Channel10 V0.6 nCEnhancement Trenchfet
BSS84DWQ-7


Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
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Diodes Incorporated 2429850
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AUD 0.17
Multiples of: 3000

                   
FDMS86200


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor 1940970
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AUD 1.3524
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWER - 56Reel       
ZVN3320FTA


N-Channel 200 V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 1740180
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AUD 0.1816
Multiples of: 3000

60 mA200 V25 OhmsN - Channel 1 V- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
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