Product Information

FDMS86200

FDMS86200 electronic component of ON Semiconductor

Datasheet
MOSFET 150V N-Channel PowerTrench MOSFET

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 2.6321 ( AUD 2.9 Inc GST) ea
Line Total: AUD 2.6321 ( AUD 2.9 Inc GST)

1746 - Global Stock
Ships to you between
Thu. 18 Jul to Tue. 23 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
58200 - Global Stock


Ships to you between Thu. 11 Jul to Wed. 17 Jul

MOQ : 3000
Multiples : 3000

Stock Image

FDMS86200
ON Semiconductor

3000 : AUD 1.91

1746 - Global Stock


Ships to you between
Thu. 18 Jul to Tue. 23 Jul

MOQ : 1
Multiples : 1

Stock Image

FDMS86200
ON Semiconductor

1 : AUD 2.6321
10 : AUD 2.1993
30 : AUD 1.9621
100 : AUD 1.696
500 : AUD 1.5774
1000 : AUD 1.5228

31425 - Global Stock


Ships to you between Wed. 17 Jul to Fri. 19 Jul

MOQ : 1
Multiples : 1

Stock Image

FDMS86200
ON Semiconductor

1 : AUD 4.3877
10 : AUD 3.6446
100 : AUD 2.9015
500 : AUD 2.4592
1000 : AUD 2.1054

55290 - Global Stock


Ships to you between Thu. 11 Jul to Wed. 17 Jul

MOQ : 3000
Multiples : 3000

Stock Image

FDMS86200
ON Semiconductor

3000 : AUD 2.003

3230 - Global Stock


Ships to you between Thu. 11 Jul to Wed. 17 Jul

MOQ : 6
Multiples : 1

Stock Image

FDMS86200
ON Semiconductor

6 : AUD 3.039
10 : AUD 2.871
100 : AUD 2.5612
500 : AUD 2.3174
1000 : AUD 2.094
3000 : AUD 2.0088

37830 - Global Stock


Ships to you between Thu. 11 Jul to Wed. 17 Jul

MOQ : 3000
Multiples : 3000

Stock Image

FDMS86200
ON Semiconductor

3000 : AUD 2.9844

     
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Notes:- Show Stocked Products With Similar Attributes.

The FDMS86200 with MOSFET 150V N-Channel PowerTrench MOSFET is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by ON Semiconductor. It is a low voltage N-Channel MOSFET featuring a wide range of threshold voltages suitable for various power management applications. It has an exceptionally low on-resistance and optimized gate charge profile providing lower switching loss and improved efficiency. In addition, it features ultra-low leakage (RDS (on) x Qg), fast switching, and excellent avalanche energy level characteristics. The maximum drain source voltage is 150V and the current drain is up to 80A. This MOSFET is ideal for high current switching applications such as motor control, solar inverter, lighting, and other power management solutions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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