SOT23 N-CHANNEL ENHANCEMENT ZVN3320F MODE VERTICAL DMOS FET ISSUE 3 DECEMBER 1995 FEATURES * 200 Volt V DS S *R =25 DS(on) D G PARTMARKING DETAIL MU SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V 200 V DS Continuous Drain Current at T =25C I 60 mA amb D Pulsed Drain Current I 1A DM Gate-Source Voltage V 20 V GS Power Dissipation at T =25C P 330 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source BV 200 V I =1mA, V =0V DSS D GS Breakdown Voltage Gate-Source Threshold V 1.0 3.0 V I =1mA, V =V GS(th) D DS GS Voltage Gate-Body Leakage I 100 nA V = 20V, V =0V GSS GS DS Zero Gate Voltage I 10 A V =200V, V =0V DSS DS GS Drain Current 50 V =160V, V =0V, A DS GS T=125C(2) On-State Drain Current(1) I 250 mA V =25V, V =10V D(on) DS GS Static Drain-Source On-State R 25 V =10V,I =100mA DS(on) GS D Resistance (1) Forward Transconductance(1) g 75 mS V =25V,I =100mA fs DS D (2) Input Capacitance (2) C 45 pF iss Common Source C 18 pF V =25V, V =0V, f=1MHz oss DS GS Output Capacitance (2) Reverse Transfer Capacitance C 5pF rss (2) Turn-On Delay Time (2)(3) t 5ns d(on) Rise Time (2)(3) t 7ns r V 25V, I =100mA DD D Turn-Off Delay Time (2)(3) t 6ns d(off) Fall Time (2)(3) t 6ns f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 398