1. The 2N7002E-7-F is a transistor produced by Diodes Incorporated. It is a general-purpose N-Channel Enhancement Mode Field Effect Transistor (FET).
2. This device has a low-on resistance of 6.0ohm and a low drain to source breakdown voltage of 7V. It is suitable for use in a variety of applications such as switching, level shifting, and small signal amplification. It is housed in a small SOT-23 surface-mount package and is lead-free and RoHS compliant.