BSS123-7-F is a P-channel MOSFET transistor made by Diodes Incorporated. It is a surface-mount device with a TO-236AB package. It has a maximum drain current of 1.2A and its maximum drain-to-source voltage is 30V. The gate-to-source voltage is rated at ±20V. It has an on-state resistance of 7.0O and an maximum power dissipation of 250mW.