About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMP10A13FTA


MOSFET P-Ch 100 Volt 0.7A
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Diodes Incorporated 931200
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AUD 0.242
Multiples of: 3000

700 mA100 V1 OhmsP - Channel 2 V- 55 C+ 150 C806 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V3.5 nCEnhancement  
IRLML2803TRPBF


Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
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Infineon 838080
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AUD 0.104
Multiples of: 3000

            Hexfet®      
NVTA7002NT1G


MOSFET NFET SC75 30V 154MA 7OHM
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ON Semiconductor 811890
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AUD 0.0814
Multiples of: 1

154 mA30 V1.4 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSC - 75ReelSi1 Channel10 V  Aec - Q101 
BSS123N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 791407
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AUD 0.0778
Multiples of: 1

190 mA100 V2.4 OhmsN - Channel 1.9 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
AO3400A


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 RoHS
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Youtai 782955
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AUD 0.027
Multiples of: 20

                   
BSS123LT1G


MOSFET 100V 170mA N-Channel
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ON Semiconductor 782790
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AUD 0.0532
Multiples of: 3000

170 mA100 V6 OhmsN - Channel 1.6 V- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
BSH205G2AR


P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB
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Nexperia 761967
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AUD 0.1026
Multiples of: 1

          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Digi - Reel®Mosfet (Metal Oxide)      
BSS84,215


P-Channel 50 V 130mA (Ta) 250mW (Tc) Surface Mount TO-236AB
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Nexperia 759510
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AUD 0.0458
Multiples of: 3000

   P - Channel  - 65 C+ 150 C Smd/SmtSOT - 23Reel       
SI2371EDS-T1-GE3


Vishay Semiconductors MOSFET -30V 45mOhm10V -4.8A P-Ch G-III
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Vishay 759269
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AUD 0.1079
Multiples of: 1

- 4.8 A- 30 V45 mOhmsP - Channel - 0.6 v to - 1.5 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V10.6 nCEnhancement Trenchfet Power Mosfet
BSS138-13-F


50V 200mA 300mW 3.5O@10V,220mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 751070
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AUD 0.0438
Multiples of: 1

200 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V-Enhancement  
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