SPD15P10PL G SIPMOS Power-Transistor Product Summary Features V -100 V DS P-Channel R 0.20 : DS(on),max Enhancement mode I -15 A D logic level Avalanche rated PG-TO252-3 Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Type Package Marking Lead free Packing SP D15P10PL G PG-TO2 52-3 15P10PL Yes Non dry Maximum ratings, atT =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C -15 Continuous drain current A D C T =100 C 11.3 C I T =25 C -60 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =-15 A, R =25 : 230 mJ AS D GS Gate source voltage V 20 V GS Power dissipation P T =25 C 128 W tot C Operating and storage temperature T ,T -55 ... 175 C j stg ESD Class 1C (1kV to 2kV) Soldering temperature 260 C IEC climatic category DIN IEC 68-1 55/175/56 Rev 1.5 page 1 2012-09-03 SPD15P10PL G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.17 K/W thJC junction - soldering point Thermal resistance, minimal footprint, R -- 75 thJA junction - ambient steady state 2 1) 6 cm cooling area , -- 45 steady state Electrical characteristics, atT =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =-250 mA -100 - - V (BR)DSS GS D V =V ,I =- DS GS D V Gate threshold voltage -1 -1.5 -2 GS(th) 1.54 mA V =-100 V, V =0 V, DS GS I Zero gate voltage drain current - -0.1 -1 A DSS T =25 C j V =-100 V, V =0 V, DS GS - -10 -100 T =150 C j I V =-20 V, V =0 V Gate-source leakage current - -10 -100 nA GSS GS DS Drain-source on-state resistance R V =-4.5 V, I =-9.7 A - 190 270 m : DS(on) GS D V =-10 V, GS - 140 200 m : I =-11.3 A D V >2 I R , DS D DS(on)max g Transconductance 5.5 11.0 - S fs I =-11.3 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev 1.5 page 2 2012-09-03