About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2302-HXY


20V 2.8A 55mΩ@4.5V,2.8A 0.9W N Channel SOT-23 MOSFETs ROHS
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HXY MOS 339357
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AUD 0.0112
Multiples of: 50

                   
CJ3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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Changjiang 336602
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AUD 0.0463
Multiples of: 10

                   
SI2312BDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 335562
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AUD 0.3194
Multiples of: 1

3.9 A20 V31 mOhmsN - Channel 850 mV- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V7.5 nCEnhancement  
AO3401


30V 4.2A 65mO@10V,4.2A 350mW P Channel SOT-23 MOSFETs ROHS
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TWGMC 334281
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AUD 0.0374
Multiples of: 10

                   
Si2347DS-T1-GE3


Vishay Semiconductors MOSFET -30V .042Ohm10V 5A P-Ch G-III
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Vishay 333765
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AUD 0.1115
Multiples of: 1

- 3.9 A- 30 V68 mOhmsP - Channel - 1 v to - 2.5 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V6.9 nCEnhancement Trenchfet
CMLDM3737 TR


MOSFET 20V Dual N-Ch FET 8.0Vgs 540mA 350mW
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Central Semiconductor 332400
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AUD 0.2558
Multiples of: 1

   N - Channel     Smd/SmtSOT - 563Cut TapeSi2 Channel     
DMG9933USD-13


Diodes Incorporated MOSFET N-Ch Dual MOSFET 20V VDSS 12V VGSS
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Diodes Incorporated 324950
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AUD 0.2362
Multiples of: 2500

4.6 A20 V55 mOhms , 55 mOhmsp - channel 1.1 V- 55 C+ 150 C1.15 Wsmd/smtSO - 8Tape And Reelsi2 channel12 V6.5 nC , 6.5 nCenhancement  
BSS314PEH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
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Infineon 315209
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AUD 0.1115
Multiples of: 1

            Optimos P3      
DMP3099L-7


MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
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Diodes Incorporated 309460
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AUD 0.0474
Multiples of: 10

3.8 A30 V65 mOhmsP - Channel 1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V11 nCEnhancement  
FDC6321C


Transistor: N/P-MOSFET; unipolar; 25/-25V; 0.68/0.46A; 0.9W
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ON Semiconductor 305550
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AUD 0.338
Multiples of: 3000

                   
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