About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG1013TQ-7


MOSFET MOSFET BVDSS: 8V~24V SOT523 T&R 3K
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 267050
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AUD 0.148
Multiples of: 1

           Cut TapeSi    Aec - Q101 
BSH105,215


N-Channel 20 V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB
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Nexperia 266007
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AUD 0.1327
Multiples of: 1

   N Channel      SOT - 23Reel       
2N7002KX


60V 300mA 1.2V 1PCSNChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang 264870
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AUD 0.0123
Multiples of: 20

                   
BSS84PWH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
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Infineon 264410
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AUD 0.0602
Multiples of: 1

            Sipmos      
BSS138NH6433XTMA1


MOSFET SMALL SIGNAL N-CH
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Infineon 262083
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AUD 0.0672
Multiples of: 1

230 mA60 V3.5 OhmsN - Channel20 V1.4 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V1 nCEnhancement  
PJA3404_R1_00001


MOSFET N Channel 30V 5.6A 2.1V @ 250uA 45mO @ 3.5A,4.5V SOT-23 RoHS
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Panjit 260082
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AUD 0.0725
Multiples of: 1

                   
DMN4031SSD-13


MOSFET MOSFET BVDSS: 31V-40 SO-8,2.5K
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Diodes Incorporated 257050
Ships to you
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AUD 0.361
Multiples of: 2500

7 A40 V31 mOhmsN - Channel  - 55 C+ 150 C1.42 WSmd/SmtSO - 8ReelSi2 Channel20 V18.6 nCEnhancement  
BSS308PEH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
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Infineon 256080
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AUD 0.1436
Multiples of: 3000

            Optimos P3      
2N7002K_R1_00001


MOSFET N Trench 60V 300mA 2.5V @ 250uA 4 Ω @ 200mA,4.5V SOT-23 (SOT-23-3) RoHS
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Panjit 252634
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AUD 0.0318
Multiples of: 1

                   
SIA437DJ-T1-GE3


Vishay Semiconductors MOSFET 20V 14.5mOhm4.5V 16A P-Ch
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Vishay 250927
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AUD 0.3963
Multiples of: 1

- 12.6 A- 20 V14.5 mOhmsP - Channel - 0.9 V- 50 C+ 150 C3.5 WSmd/SmtPOWERPAK - SC - 70 - 6Reel   60 nCEnhancement  
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