Si2312BDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.031 at V = 4.5 V 5.0 GS TrenchFET Power MOSFET 20 0.037 at V = 2.5 V 4.6 7.5 GS 100 % R Tested g 0.047 at V = 1.8 V 4.1 GS Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 D S 2 Top View Si2312BDS (M2)* * Marking Code Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free) Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS T = 25 C 5.0 3.9 A a Continuous Drain Current (T = 150 C) I J D T = 70 C 4.0 3.1 A A b Pulsed Drain Current I 15 DM b Avalanche Current I 13 AS L = 0.1 mH Single Avalanche Energy E 8.45 mJ AS a Continuous Source Current (Diode Conduction) I 1.0 0.63 A S T = 25 C 1.25 0.75 A a Power Dissipation P W D T = 70 C 0.80 0.48 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 80 100 a Maximum Junction-to-Ambient R thJA Steady State 120 166 C/W Maximum Junction-to-Foot Steady State R 50 60 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 73235 www.vishay.com S10-0791-Rev. D, 05-Apr-10 1Si2312BDS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 DS GS D V Gate-Threshold Voltage V V = V , I = 250 A 0.45 0.85 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 70 C 75 DS GS J a On-State Drain Current I V 10 V, V = 4.5 V 15 A D(on) DS GS V = 4.5 V, I = 5.0 A 0.025 0.031 GS D a Drain-Source On-Resistance R V = 2.5 V, I = 4.6 A 0.030 0.037 DS(on) GS D V = 1.8 V, I = 4.1 A 0.036 0.047 GS D a Forward Transconductance g V = 15 V, I = 5.0 A 30 S fs DS D Diode Forward Voltage V I = 1.0 A, V = 0 V 0.8 1.2 V SD S GS b Dynamic Total Gate Charge Q 7.5 12 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 5.0 A 1.4 nC gs DS GS D Gate-Drain Charge Q 1.2 gd Gate Resistance R f = 1.0 MHz 1.1 2.2 3.3 g Switching Turn-On Delay Time t 915 d(on) Rise Time t 30 45 r V = 10 V, R = 10 DD L I 1.0 A, V = 4.5 V, R = 6 Turn-Off Delay Time t 3555 ns D GEN g d(off) Fall Time t 10 15 f Source-Drain Reverse Recovery Time t 13 25 rr I = 1.0 A, dI/dt = 100 A/s F Body Diode Reverse Recovery Charge Q 4.5 7 nC rr Notes: a. Pulse test: Pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 15 15 V = 4.5 V thru 2 V GS 1.5 V 12 12 9 9 6 6 T = 125 C C 3 3 25 C 1 V - 55 C 0 0 01 23 4 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73235 2 S10-0791-Rev. D, 05-Apr-10 I - Drain Current (A) D I - Drain Current (A) D