BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS Dual N-channel R V =4.5 V 350 mW DS(on),max GS Enhancement mode V =2.5 V 600 GS Super Logic level (2.5V rated) I 0.95 A D Avalanche rated Qualified according to AEC Q101 PG-SOT-363 100% lead-free RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSD235N PG-SOT-363 H6327: 3000 pcs/ reel X6s Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j 1) Value Symbol Conditions Unit Parameter Continuous drain current I T =25C 0.95 A D A T =70C 0.76 A I T =25C Pulsed drain current 3.8 D,pulse A E Avalanche energy, single pulse I =0.95A, R =16W 1.6 mJ AS D GS I =0.95A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max Gate source voltage V 12 V GS P T =25C 0.5 Power dissipation W tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 (1) Remark: only one of both transistors in operation. Rev 2.5 page 1 2014-07-29BSD235N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, (2) R - - 250 K/W thJA minimal footprint junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 20 - - V (BR)DSS GS D V V =V , I =1.6A Gate threshold voltage 0.7 0.95 1.2 GS(th) DS GS D V =20V, V =0V, DS GS I Drain-source leakage current - - 1 mA DSS T =25C j V =20V, V =0V, DS GS - - 100 T =150C j I V =12V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =2.5V, I =0.29A Drain-source on-state resistance - 415 600 mW DS(on) GS D V =4.5V, I =0.95A - 266 350 GS D V >2 I R , DS D DS(on)max Transconductance g 2 - S fs I =0.76A D 2) 2 Performed on 40 mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mm long they are present on both sides of the PCB Rev 2.5 page 2 2014-07-29