The SI2312BDS-T1-GE3 is an N-Channel, 20 V, 3.9A (Ta), 750mW (Ta), Surface Mount SOT-23-3 (TO-236) MOSFET, designed and manufactured by Vishay. It is constructed of low RDS(on) to minimize conduction losses and is designed to be used in a variety of low and medium current applications. It has a user-friendly footprint and is capable of handling fast switching speeds. Its advanced features like fast intrinsic diode and ESD protection ensures it is robust and highly reliable. This MOSFET provides a great balance between performance and cost effectiveness.