About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW75N65ES5XKSA1


IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
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Infineon 937
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AUD 7.173
Multiples of: 1

Single650 V1.42 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 S5
AIKB20N60CTATMA1


IGBT Transistors DISCRETES
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Infineon 925
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AUD 3.2554
Multiples of: 1

         Cut TapeSi    600V Trenchstop
RGT16NS65DGC9


IGBT Trench Field Stop 650 V 16 A 94 W Through Hole TO-262
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ROHM 920
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AUD 1.9285
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Single650 V1.65 V30 V16 A200 nA  TO - 262 - 3TubeSiThrough Hole94 W- 40 C+ 175 C 
IKB30N65EH5ATMA1


IGBT Transistors Infineon s 650 V 30 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
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Infineon 913
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AUD 3.1214
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Single650 V1.65 V20 V55 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt188 W- 40 C+ 175 C650V Trenchstop 5
RGT20TM65DGC9


IGBT Transistors 650V 10A IGBT Field Stop Trench
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ROHM 902
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AUD 2.07
Multiples of: 1

         Tube      
G40T120AK3S


278W 238ns 77ns +150℃@(Tj) 80A 1.2kV 6V@250uA 208nC@40A,15V 1.9V@10A,15V 1.5mJ 2.8mJ 1mA@1.2kV 6.618nF@25V 2.4V@20A 160A TO-247 IGBTs ROHS
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CRMICRO 899
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AUD 3.7603
Multiples of: 1

                
IKA06N60TXKSA1


Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
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Infineon 892
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AUD 1.3662
Multiples of: 1

      28 W   Trenchstop     
RGT50NS65DGC9


IGBT Trench Field Stop 650 V 48 A 194 W Through Hole TO-262
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ROHM 888
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AUD 2.99
Multiples of: 1

Single650 V1.65 V30 V48 A200 nA  TO - 262 - 3TubeSiThrough Hole194 W- 40 C+ 175 C 
FGA25N120ANTDTU


Transistor: IGBT; 1.2kV; 25A; 125W; TO3P
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ON Semiconductor 873
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AUD 5.6038
Multiples of: 1

                
IXBH16N170


Trans IGBT Chip N-CH 1.7KV 40A 3-Pin(3+Tab) TO-247AD
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IXYS 873
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AUD 16.3654
Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole150 W- 55 C+ 150 CIxbh16n170
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