About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGL60N100BNTDTU


IGBT Transistors HIGH_POWER
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 873
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AUD 30.39
Multiples of: 1

Single1000 V1.5 V+/- 25 V60 A+/- 500 nA180 W TO - 264 - 3TubeSiThrough Hole180 W- 55 C+ 150 CFgl60n100bntdtu
AOTF10B60D


Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eon:0.35mJ; Eoff:0.16mJ
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Alpha & Omega 867
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AUD 2.2667
Multiples of: 1

  1.53 V   16.7 W         
STGP10NC60S


Trans IGBT Chip N-CH 600V 21A 3-Pin(3+Tab) TO-220 Tube
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STMicroelectronics 867
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AUD 2.0682
Multiples of: 6

Single        Rail/Tube      
RGT8NS65DGTL


IGBT Transistors 650V 4A Field Stop Trench IGBT
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ROHM 866
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AUD 0.9766
Multiples of: 1

 650 V1.65 V+/- 30 V8 A+/- 200 nA  TO - 263 - 3ReelSiSmd/Smt65 W- 40 C+ 175 CRgt8ns65d
RGT30NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 861
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AUD 2.4381
Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 262 - 3TubeSiThrough Hole133 W- 40 C+ 175 C 
KGF50N60KDA


TO-247-3 IGBTs ROHS
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KEC 861
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AUD 2.614
Multiples of: 1

                
RGT16NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 857
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AUD 1.9285
Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt94 W- 40 C+ 175 C 
RGTH00TS65GC13


IGBT Transistors IGBT
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ROHM 851
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AUD 5.1761
Multiples of: 1

Single650 V2.1 V30 V85 A   TO - 247GE - 3TubeSiThrough Hole277 W- 40 C+ 175 C 
IKFW40N60DH3EXKSA1


Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
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Infineon 845
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AUD 5.0381
Multiples of: 1

      81 W   Trenchstop     
IKZA50N65SS5XKSA1


IGBT Trench Field Stop 650V 80A 274W Through Hole PG-TO247-4-3
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Infineon 845
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AUD 9.8192
Multiples of: 1

        TO - 247 - 4Tube     Trenchstop 5
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