IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
CRG40T60AN3S


TO-3P(N) IGBTs ROHS
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CRMICRO 839
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between Wed. 11 Sep to Mon. 16 Sep
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AUD 1.2435

Multiples of: 1

                
STGB30M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics 828
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between Wed. 11 Sep to Mon. 16 Sep
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AUD 1.7841

Multiples of: 1

         ReelSi    600 - 650V Igbts
RGTV60TK65GVC11


IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
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ROHM 827
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between Tue. 03 Sep to Thu. 05 Sep
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AUD 5.0866

Multiples of: 1

Single650 V1.5 V30 V33 A200 nA  TO - 3PFMTubeSiThrough Hole76 W- 40 C+ 175 C 
IGW75N65H5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 818
Ships to you
between Tue. 03 Sep to Thu. 05 Sep
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AUD 4.7095

Multiples of: 1

Single650 V1.65 V20 V120 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 H5
IKP10N60TXKSA1


IGBT Transistors LOW LOSS DuoPack 600V 10A
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Infineon 816
Ships to you
between Tue. 03 Sep to Thu. 05 Sep
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AUD 1.2869

Multiples of: 1

Single600 V1.5 V+/- 20 V24 A100 nA  TO - 220 - 3TubeSiThrough Hole110 W- 40 C+ 175 CXkp10n60
IKB20N60T


IGBT Transistors LOW LOSS DuoPack 600V 20A
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Infineon 815
Ships to you
between Tue. 03 Sep to Thu. 05 Sep
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AUD 2.3

Multiples of: 1

Single600 V1.5 V+/- 20 V41 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt166 W- 40 C+ 175 CTrenchstop Igbt
DGTD120T40S1PT


IGBT Transistors IGBT 1200V-X TO247 TUBE 0.45K
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Diodes Incorporated 811
Ships to you
between Tue. 03 Sep to Thu. 05 Sep
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AUD 11.2115

Multiples of: 1

Single1200 V2 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole357 W- 55 C+ 150 C 
HGTP5N120BND


IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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ON Semiconductor 808
Ships to you
between Wed. 11 Sep to Mon. 16 Sep
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AUD 7.9296

Multiples of: 1

Single1200 V2.45 V+/- 20 V21 A+/- 250 nA167 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CHgtp5n120
CRG75T65BK5SD


TO-247 IGBTs ROHS
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CRMICRO 806
Ships to you
between Wed. 11 Sep to Mon. 16 Sep
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AUD 2.5104

Multiples of: 1

                
APT50GP60B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 805
Ships to you
between Tue. 03 Sep to Thu. 05 Sep
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AUD 22.2151

Multiples of: 1

      625 W   POWER MOS 7®, PT     
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