About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGB15N60T


Transistor: IGBT; 600V; 15A; 130W; D2PAK
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Infineon 1214
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AUD 1.5133
Multiples of: 1

      130 W         
Hot IKA15N60T


IGBT Transistors LOW LOSS DuoPack 600V 15A
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Infineon 1201
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AUD 0.9566
Multiples of: 1

Single600 V1.5 V+/- 20 V18.3 A100 nA  TO - 220 - 3TubeSiThrough Hole35.7 W- 40 C+ 150 CIka15n60
IKW50N60DTP


IGBT Transistors INDUSTRY 14
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Infineon 1164
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AUD 3.2678
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IKP06N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6A
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Infineon 1148
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AUD 1.1005
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Single600 V1.5 V+/- 20 V12 A100 nA  TO - 220 - 3TubeSiThrough Hole88 W- 40 C+ 150 CIkp06n60
Hot IKW40N120T2


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A
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Infineon 1117
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AUD 4.801
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Single1200 V2.3 V+/- 20 V75 A200 nA  TO - 247 - 3TubeSiThrough Hole480 W- 40 C+ 150 CIkw40n120
RGC80TSX8RGC11


IGBT Transistors REVERSE CONDUCTING IGBT
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ROHM 1107
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AUD 8.9079
Multiples of: 1

Single1.8 kV2.2 V30 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole535 W- 40 C+ 175 C 
NGTB25N120FL3WG


IGBT Transistors IGBT 1200V 25A FS3 SOLAR/
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ON Semiconductor 1106
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AUD 4.4758
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Single1.2 kV1.7 V+/- 20 V100 A200 nA  TO 247 - 3TubeSiThrough Hole349 W- 55 C+ 175 C 
IGU04N60TAKMA1


IGBT Transistors Infineons TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
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Infineon 1077
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AUD 1.064
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        TO - 251 - 3TubeSi    Trenchstop Igbt
IKA15N60TXKSA1


IGBT Transistors LOW LOSS DuoPack 600V 15A
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Infineon 1068
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AUD 1.5764
Multiples of: 1

Single600 V1.5 V+/- 20 V18.3 A100 nA  TO - 220FP - 3TubeSiThrough Hole35.7 W- 40 C+ 175 CTrenchstop Igbt
IKP04N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 4A
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Infineon 1058
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AUD 1.0173
Multiples of: 1

Single600 V1.5 V+/- 20 V9.5 A100 nA  TO - 220 - 3TubeSiThrough Hole42 W- 40 C+ 150 CIkp04n60
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