The G40T120AK3S is an Insulated Gate Bipolar Transistor (IGBT) manufactured by CRMICRO with RoHS compliance. It has an average gate current of 80A and a breakdown voltage of 1.2kV. This IGBT also has a maximum storage temperature up to +150? (Tj) and a turn-off energy dissipation of 2.8mJ. Other specifications include total gate charge of 238ns, gate charge at 25V of 6.618nF, gate charge at 6V of 250uA, and gate charge at 15V of 1mA. This IGBT features a withstand voltage of 1.9V at 10A, and a maximum collector current of 160A with a turn-on energy dissipation of 1.5mJ. The package type of this device is TO-247. Finally, it has a power dissipation of 278W and a maximum collector-emitter saturation voltage of 2.4V at 20A.