Stmicroelectronics and SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

SCT20N120H

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2025

February 2025
	S	M	T	W	T	F	S
5	26	27	28	29	30	31	1
6	2	3	4	5	6	7	8
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8	16	17	18	19	20	21	22
9	23	24	25	26	27	28	1
10	2	3	4	5	6	7	8

AUD 18.3943

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

20 A

239 mOhms

- 10 V , + 25 V

3.5 V

45 nC

- 55 C

+ 175 C

175 W

Enhancement

SCT027W65G3-4AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2025

February 2025
	S	M	T	W	T	F	S
5	26	27	28	29	30	31	1
6	2	3	4	5	6	7	8
7	9	10	11	12	13	14	15
8	16	17	18	19	20	21	22
9	23	24	25	26	27	28	1
10	2	3	4	5	6	7	8

AUD 21.36

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

60 A

29 mOhms

- 18 V , + 18 V

4.2 V

51 nC

- 55 C

+ 200 C

313 W

Enhancement

SCTL35N65G2V

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 40 A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2025

February 2025
	S	M	T	W	T	F	S
5	26	27	28	29	30	31	1
6	2	3	4	5	6	7	8
7	9	10	11	12	13	14	15
8	16	17	18	19	20	21	22
9	23	24	25	26	27	28	1
10	2	3	4	5	6	7	8

AUD 36.2959

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

40 A

67 mOhms

- 10 V , + 22 V

5 V

73 nC

- 55 C

+ 175 C

417 W

Enhancement

SCTW70N120G2V

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ 91 A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2025

February 2025
	S	M	T	W	T	F	S
5	26	27	28	29	30	31	1
6	2	3	4	5	6	7	8
7	9	10	11	12	13	14	15
8	16	17	18	19	20	21	22
9	23	24	25	26	27	28	1
10	2	3	4	5	6	7	8

AUD 36.4737

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

91 A

21 mOhms

- 10 V , + 22 V

4.9 V

150 nC

- 55 C

+ 200 C

547 W

Enhancement

SCT30N120H

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2025

February 2025
	S	M	T	W	T	F	S
5	26	27	28	29	30	31	1
6	2	3	4	5	6	7	8
7	9	10	11	12	13	14	15
8	16	17	18	19	20	21	22
9	23	24	25	26	27	28	1
10	2	3	4	5	6	7	8

AUD 40.2904

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

45 A

90 mOhms

- 10 V , + 25 V

1.8 V

105 nC

- 55 C

+ 175 C

270 W

Enhancement

SCTWA50N120

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2025

February 2025
	S	M	T	W	T	F	S
5	26	27	28	29	30	31	1
6	2	3	4	5	6	7	8
7	9	10	11	12	13	14	15
8	16	17	18	19	20	21	22
9	23	24	25	26	27	28	1
10	2	3	4	5	6	7	8

AUD 40.851

Multiples of: 10

Through Hole

N - Channel

1 Channel

1.2 kV

65 A

52 mOhms

- 10 V , + 25 V

1.8 V

122 nC

- 55 C

+ 200 C

318 W

Enhancement

HiP247

SCT30N120

SiC MOSFETs 1200V silicon carbide MOSFET

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2025

February 2025
	S	M	T	W	T	F	S
5	26	27	28	29	30	31	1
6	2	3	4	5	6	7	8
7	9	10	11	12	13	14	15
8	16	17	18	19	20	21	22
9	23	24	25	26	27	28	1
10	2	3	4	5	6	7	8

AUD 57.4063

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

45 A

80 mOhms

- 10 V , + 25 V

3.5 V

105 nC

- 55 C

+ 200 C

270 W

Enhancement

HiP247

SCTH100N65G2-7AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ 95 A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2025

February 2025
	S	M	T	W	T	F	S
5	26	27	28	29	30	31	1
6	2	3	4	5	6	7	8
7	9	10	11	12	13	14	15
8	16	17	18	19	20	21	22
9	23	24	25	26	27	28	1
10	2	3	4	5	6	7	8

AUD 60.6247

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

95 A

26 mOhms

- 10 V , + 22 V

1.9 V

162 nC

- 55 C

+ 175 C

360 W

Enhancement

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Stmicroelectronics SiC MOSFETs

SiC MOSFETs

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