X-On Electronics has gained recognition as a prominent supplier of SCT30N120 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT30N120 SiC MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT30N120 STMicroelectronics

SCT30N120 electronic component of STMicroelectronics
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See Product Specifications
Part No.SCT30N120
Manufacturer: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V silicon carbide MOSFET
Datasheet: SCT30N120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
1: AUD 60.6667 ( AUD 66.73 Inc GST) ea
Line Total: AUD 60.6667 ( AUD 66.73 Inc GST) 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Sep to Wed. 02 Oct
MOQ : 600
Multiples : 1
600 : AUD 35.9
1000 : AUD 35.64
2000 : AUD 35.38
2500 : AUD 35.12
3000 : AUD 34.86
4000 : AUD 34.6
5000 : AUD 34.34
10000 : AUD 34.08
20000 : AUD 33.82
50000 : AUD 33.56

0
Ship by Thu. 26 Sep to Wed. 02 Oct
MOQ : 1
Multiples : 1
1 : AUD 44.7809
10 : AUD 39.8306
100 : AUD 35.5994

0
Ship by Thu. 26 Sep to Wed. 02 Oct
MOQ : 1
Multiples : 1
1 : AUD 35.91
5 : AUD 34.58
20 : AUD 33.25
50 : AUD 33.25
125 : AUD 33.25

0
Ship by Wed. 02 Oct to Fri. 04 Oct
MOQ : 1
Multiples : 1
1 : AUD 33.6329
10 : AUD 31.0192
25 : AUD 29.6219
100 : AUD 26.4986
600 : AUD 26.3014

0
Ship by Thu. 26 Sep to Wed. 02 Oct
MOQ : 1
Multiples : 1
1 : AUD 60.6667
2 : AUD 57.3651
30 : AUD 57.3032

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
Hts Code
LoadingGif
 
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We are delighted to provide the SCT30N120 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT30N120 and other electronic components in the SiC MOSFETs category and beyond.

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The SCT30N120 is a high voltage Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. It is a 30A IGBT, with an enhanced CEO buffer structure and an operating voltage of up to 1200V. This makes it suited for applications such as motor drive, welding, and UPS power supply. The device has an improved dv/dt capability for surge current applications, and low collector-emitter saturation voltage for improved efficiency. The significantly improved turn-off performance of the integrated MOSFET can reduce switching losses, making the SCT30N120 ideal for power conversion applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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