About SiC MOSFETs

Stmicroelectronics SiC MOSFETs

SiC MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT20N120AG


SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm typ Tj = 15
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 4
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AUD 29.6667
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A239 mOhms- 20 V , + 20 V3.5 V45 nC- 55 C+ 200 C175 WEnhancementAEC - Q101 
SCTW100N65G2AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 4
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AUD 53.2087
Multiples of: 1

Through Hole N - Channel1 Channel650 V100 A69 mOhms- 10 V , + 22 V5 V162 nC- 55 C+ 200 C420 WEnhancementAEC - Q101 
SCTW90N65G2V


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ TJ = 25 C)
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STMicroelectronics 2
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AUD 58.5125
Multiples of: 1

Through Hole N - Channel1 Channel650 V90 A25 mOhms- 10 V , + 22 V1.9 V157 nC- 55 C+ 200 C390 WEnhancement  
SCTH35N65G2V-7


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 45 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 1
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AUD 15.7881
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 175 C208 WEnhancement  
SCTWA35N65G2V


SiC MOSFETs 650 V 45 A 75 mOhm
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STMicroelectronics 1
Ships to you
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AUD 23.9324
Multiples of: 1

Through Hole N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 200 C240 WEnhancement  
SCTWA20N120


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 1
Ships to you
between Tue. 24 Sep to Mon. 30 Sep Calender.png

AUD 24.1778
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A239 mOhms- 10 V , + 25 V3.5 V45 nC- 55 C+ 200 C175 WEnhancement  
SCTWA30N120


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm
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STMicroelectronics 1
Ships to you
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AUD 53.5662
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV45 A100 mOhms- 10 V , + 25 V3.5 V105 nC- 55 C+ 200 C270 WEnhancement  
SCT055W65G3-4AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
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STMicroelectronics 0
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AUD 14.0862
Multiples of: 1

Through Hole N - Channel1 Channel650 V30 A72 mOhms- 18 V , + 18 V4.2 V32 nC- 55 C+ 200 C210 WEnhancement  
SCT10N120AG


SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ TJ = 1
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STMicroelectronics 0
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AUD 14.8831
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV12 A500 mOhms- 10 V , + 25 V3.5 V22 nC- 55 C+ 200 C150 WEnhancementAEC - Q101 
SCTH40N120G2V7AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 15.0904
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV33 A105 mOhms- 10 V , + 22 V5 V63 nC- 55 C+ 175 C250 WEnhancementAEC - Q101 
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