Stmicroelectronics SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT1000N170


SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 17460
Ships to you
between Thu. 19 Sep to Wed. 25 Sep
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AUD 25.8846

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV6 A1 Ohms- 10 V , + 25 V2.1 V14 nC- 55 C+ 200 C120 WEnhancement  
SCTH90N65G2V-7


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ TJ = 25C)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 2240
Ships to you
between Thu. 19 Sep to Wed. 25 Sep
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AUD 40.2889

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V90 A26 mOhms- 10 V , + 22 V1.9 V157 nC- 55 C+ 175 C330 WEnhancement  
SCT040W120G3-4AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 552
Ships to you
between Wed. 25 Sep to Fri. 27 Sep
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AUD 19.0192

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV40 A54 mOhms- 18 V , + 18 V4.2 V56 nC- 55 C+ 200 C312 WEnhancement  
SCT20N120


SiC MOSFETs 1200V silicon carbide MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 323
Ships to you
between Thu. 19 Sep to Wed. 25 Sep
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AUD 13.44

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A239 mOhms- 20 V , + 20 V3.5 V45 nC- 55 C+ 200 C175 WEnhancement HiP247
SCTWA90N65G2V-4


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ 119 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 17
Ships to you
between Thu. 03 Oct to Tue. 08 Oct
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AUD 78.6595

Multiples of: 1

Through Hole N - Channel1 Channel650 V119 A24 mOhms- 10 V , + 22 V5 V157 nC- 55 C+ 200 C565 WEnhancement  
SCT50N120


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 9
Ships to you
between Thu. 03 Oct to Tue. 08 Oct
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AUD 68.5911

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV65 A52 mOhms- 10 V , + 25 V1.8 V122 nC- 55 C+ 200 C318 WEnhancement HiP247
SCT20N120AG


SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm typ Tj = 15
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 4
Ships to you
between Thu. 19 Sep to Wed. 25 Sep
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AUD 29.6667

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A239 mOhms- 20 V , + 20 V3.5 V45 nC- 55 C+ 200 C175 WEnhancementAEC - Q101 
SCTW35N65G2VAG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 4
Ships to you
between Thu. 03 Oct to Tue. 08 Oct
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AUD 36.6482

Multiples of: 1

Through Hole N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 200 C240 WEnhancementAEC - Q101 
SCTW100N65G2AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 4
Ships to you
between Thu. 03 Oct to Tue. 08 Oct
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AUD 53.2087

Multiples of: 1

Through Hole N - Channel1 Channel650 V100 A69 mOhms- 10 V , + 22 V5 V162 nC- 55 C+ 200 C420 WEnhancementAEC - Q101 
SCTW90N65G2V


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ TJ = 25 C)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 2
Ships to you
between Thu. 03 Oct to Tue. 08 Oct
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AUD 58.5125

Multiples of: 1

Through Hole N - Channel1 Channel650 V90 A25 mOhms- 10 V , + 22 V1.9 V157 nC- 55 C+ 200 C390 WEnhancement  
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