About MOSFET

Vishay MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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Qualification
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Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2318DS-T1-E3


40V 3A 750mW 45mO@10V,3.9A N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 231459
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AUD 0.2565
Multiples of: 1

3.9 A40 V45 mOhmsN - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtTO - 236 - 3ReelSi1 Channel10 V15 nCEnhancement Trenchfet
SI2333DDS-T1-GE3


P-Channel 12 V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 229890
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AUD 0.224
Multiples of: 3000

6 A12 V23 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 (TO - 236)ReelSi1 Channel8 V35 nCEnhancement P - Channel Gen Iii
SQ3989EV-T1_GE3


MOSFET Dual P-Channel 30V TSOP-6
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Vishay 229671
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AUD 0.2884
Multiples of: 1

2.5 A30 V140 mOhmsP - Channel 1.5 V- 55 C+ 175 C1.67 WSmd/SmtTSOP - 6Cut TapeSi2 Channel20 V11.1 nCEnhancementAec - Q101Trenchfet
SI3590DV-T1-E3


MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
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Vishay 229633
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AUD 0.4724
Multiples of: 1

   N And P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
SI7155DP-T1-GE3


MOSFET -40V Vds 20V Vgs PowerPAK SO-8
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Vishay 221232
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AUD 1.4773
Multiples of: 1

100 A40 V4.6 mOhmsP - Channel 1 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel4.5 V220 nCEnhancement  
SQ2337ES-T1_BE3


MOSFET P-CHANNEL 80V D-S
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Vishay 219535
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AUD 0.3839
Multiples of: 1

2.2 A80 V290 mOhmsP - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V11.5 nCEnhancement TrenchFET
SI1442DH-T1-GE3


MOSFET 12V 4A 2.8W 20mohm @ 4.5V
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Vishay 219381
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AUD 0.1168
Multiples of: 1

   N - Channel     Smd/SmtSC - 70 - 6ReelSi     Trenchfet
SQ1470AEH-T1_GE3


MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified
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Vishay 207358
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AUD 0.2884
Multiples of: 1

1.7 A30 V45 mOhmsN - Channel 600 mV- 55 C+ 175 C3.3 WSmd/SmtSOT - 363 - 6ReelSi1 Channel12 V5.2 nCEnhancementAec - Q101Trenchfet
SI2319DS-T1-E3


MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
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Vishay 207235
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AUD 0.4193
Multiples of: 1

3.0 A40 V82 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtTO - 236 - 3ReelSi1 Channel- 10 V17 nCEnhancement Trenchfet
SISS26LDN-T1-GE3


MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S
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Vishay 203978
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AUD 0.828
Multiples of: 1

81.2 A60 V4.3 mOhmsN - Channel 1 V- 55 C+ 150 C57 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V48 nCEnhancement Trenchfet, Powerpak
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