SQ3989EV www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES TSOP-6 Dual D 2 TrenchFET power MOSFET 4 S 1 AEC-Q101 qualified 5 D 1 100 % R and UIS tested g 6 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 G 2 2 S S S 1 2 2 1 G 1 Top View Marking Code: 9B G G 1 2 PRODUCT SUMMARY V (V) -30 DS R () at V = -10 V -0.155 DS(on) GS R () at V = -4.5 V -0.300 DS(on) GS I (A) -2.32 D D D 1 2 Configuration Dual Package TSOP-6 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -30 DS V Gate-source voltage V 20 GS T = 25 C -2.5 C a Continuous drain current (T = 150 C) I J D T = 125 C -1.5 C A Pulsed drain current I -10.2 DM a Continuous source current (diode conduction) I -2.1 S T = 25 C 1.67 C a Maximum power dissipation P W D T = 125 C 0.56 C Unclamped inductive surge UIS I 7A AV Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT a Maximum junction-to-ambient Steady state R 150 thJA C/W Maximum junction-to-foot (drain) Steady state R 90 thJF Note a. Surface mounted on 1 x 1 FR4 board S17-1209-Rev. D, 26-Jul-17 Document Number: 75059 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ3989EV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Gate threshold voltage V V = V , I = -250 A -0.6 - -1.5 V GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -30 V - - -1 GS DS Zero gate voltage drain I A DSS current V = 0 V V = -30 V, T = 55 C - - -5 GS DS J a On-state drain current I V = -10 V V -5 V -4 - - A D(on) GS DS V = -10 V I = -0.4 A - 0.140 0.155 Drain-source on-state GS D R DS(on) a resistance V = -4.5 V I = -0.2 A - 0.265 0.300 GS D Forward g V = -5 V, I = -1 A - 2.2 - S fs DS D a transconductance a Diode forward voltage V I = -0.5 A, V = 0 V - -0.83 -1.1 V SD S GS b Dynamic Total gate charge Q - 8.6 11.1 g Gate-source charge Q V = -10 V V = -15 V, I = -3 A -1.2 - nC gs GS DS D Gate-drain charge Q -3 - gd Gate resistance R f = 1 MHz 2.5 - 7.2 g Turn-on delay time t -5.7 8 d(on) Rise time t -3 4 V = -10 V, R = 10 r DD L ns I -1 A, V = -10 V, R = 1 k Turn-off delay time t D GEN g - 13.8 18 d(off) Fall time t -2 3 f Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1209-Rev. D, 26-Jul-17 Document Number: 75059 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000