About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Package / Case
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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Qualification
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML5103TRPBF


MOSFET P Trench 30V 760mA 1V @ 250uA 600 mΩ @ 600mA,10V SOT-23 (SOT-23-3) RoHS
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Infineon 430680
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AUD 0.116
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
SN7002N H6433


Infineon Technologies MOSFET
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Infineon 103759
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AUD 0.0672
Multiples of: 1

200 mA60 V5 OhmsP - Channel 800 mV- 55 C+ 150 C0.36 WSmd/SmtPG - SOT - 23 - 3ReelSi1 Channel10 V1 nCEnhancement  
IRLHS2242TRPBF


P-Channel 20 V 7.2A (Ta), 15A (Tc) 2.1W (Ta), 9.6W (Tc) Surface Mount 6-PQFN (2x2)
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Infineon 100880
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AUD 0.183
Multiples of: 4000

15 A20 V31 mOhmsP - Channel    9.6 WSmd/SmtPQFN - 6ReelSi1 Channel12 V12 nC   
IRF9389TRPBF


International Rectifier MOSFET 30V Dual N and P Ch HEXFET 20-8 20VGS
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Infineon 99439
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AUD 0.299
Multiples of: 1

6.8 A , - 4.6 A30 V22 mOhms , 51 mOhmsN - Channel, P - Channel 1.3 V , - 1.3 V- 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel20 V6.8 nC , 8.1 nC  Hexfet
BSS314PE H6327


Infineon Technologies MOSFET P-Ch -30V -1.5A SOT-23-3
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Infineon 99112
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AUD 0.1079
Multiples of: 1

1.5 A30 V107 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 2.9 nCEnhancementAec - Q101 
BSL308CH6327XTSA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 97388
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AUD 0.3627
Multiples of: 1

2 A , 2.3 A30 V130 mOhms , 93 mOhmsN - Channel, P - Channel 2 v , 1.2 V- 55 C+ 150 C0.5 WSmd/SmtTSOP - 6Cut TapeSi2 Channel20 V- 1.2 nC , 650 pCEnhancement  
SPD08P06PGBTMA1


Infineon Technologies MOSFET P-Ch -60V -8.8A DPAK-2
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Infineon 96291
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AUD 0.5396
Multiples of: 1

8.83 A60 V230 mOhmsP - Channel 4 V- 55 C+ 175 C42 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V- 13 nCEnhancementAec - Q101 
BSS169H6327XT


MOSFET SIPMOS Small Signal Transistor
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Infineon 95957
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AUD 0.2437
Multiples of: 1

90 mA100 V6 OhmsN - Channel 2.9 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT - 23ReelSi1 Channel10 V2.1 nCDepletionAec - Q101 
BSL215CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
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Infineon 23280
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AUD 0.277
Multiples of: 3000

            Optimos 2      
Hot BSC014N04LSIATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
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Infineon 1187
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AUD 2.0834
Multiples of: 1

            Optimos      
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