SN7002N SIPMOS Small-Signal-Transistor Product Summary Feature V 60 V DS N-Channel R 5 DS(on) Enhancement mode I 0.2 A D Logic Level PG-SOT-23 dv/dt rated Drain pin 3 Qualified according to AEC Q101 Gate pin1 Halogen-free according to IEC61249-2-21 Source pin 2 Type Package Pb-free Tape and Reel Information Marking PG-SOT-23 SN7002N Yes H6327: 3000 pcs/reel sSN Yes SN7002N PG-SOT-23 H6433: 10000 pcs/reel sSN Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 0.2 A T =70C 0.16 A 0.8 Pulsed drain current I D puls T =25C A Reverse diode dv/dt dv/dt 6 kV/s I =0.2A, V =48V, di/dt=200A/s, T =150C S DS jmax V Gate source voltage V 20 GS ESD Class (JESD22-A114-HBM) 0 (<250V) 0.36 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev. 2.6 Page 1 2011-07-11SN7002N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 350 K/W Thermal resistance, junction - ambient R thJA at minimal footprint Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics 60 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =250A GS D 0.8 1.4 1.8 Gate threshold voltage, V = V V GS DS GS(th) I =26A D A Zero gate voltage drain current I DSS V =60V, V =0, T =25C - - 0.1 DS GS j V =60V, V =0, T =150C - - 5 DS GS j - - 10 nA Gate-source leakage current I GSS V =20V, V =0 GS DS - 3.9 7.5 Drain-source on-state resistance R DS(on) V =4.5V, I =0.17A GS D - 2.5 5 Drain-source on-state resistance R DS(on) V =10V, I =0.5A GS D Rev. 2.6 Page 2 2011-07-11