About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWA40H120DF2


IGBT Transistors IGBT & Power Bipolar
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 50
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AUD 5.0385
Multiples of: 1

Single1.2 kV2.5 V20 V80 A250 nA  TO - 247 - 3  Through Hole468 W- 55 C+ 175 C900 - 1300V Igbts
STGP4M65DF2


IGBT Transistors Trench Gate IGBT M Series 650V 4A
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STMicroelectronics 48
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AUD 2.2786
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Single650 V1.6 V+/- 20 V8 A250 uA  TO - 220 - 3Tube Through Hole68 W- 55 C+ 175 CStgp4m65df2
STGP10H60DF


IGBT Transistors Trench gate H series 600V 10A HiSpd
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STMicroelectronics 48
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AUD 2.3436
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Single600 V1.5 V+/- 20 V20 A250 nA115 W TO - 220 - 3TubeSiThrough Hole115 W- 55 C+ 175 CStgp10h60df
STGWA50H65DFB2


IGBT Transistors Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT
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STMicroelectronics 44
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AUD 6.4848
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STGWT40V60DF


STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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STMicroelectronics 40
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AUD 2.5577
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Single600 V2.35 V20 V80 A250 nA  TO - 3PTubeSiThrough Hole283 W- 55 C+ 175 C600 - 650V Igbts
STGP14NC60KD


Transistor: IGBT; 600V; 14A; 80W; TO220AB
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STMicroelectronics 38
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AUD 1.6536
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      80 W         
STGFW20V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
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STMicroelectronics 37
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AUD 2.1772
Multiples of: 1

Single600 V1.8 V+/- 20 V40 A250 nA  TO - 3PFTubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
STGB7H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed
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STMicroelectronics 36
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AUD 0.7362
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          Si    Stgb7h60df
STGW40M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 35
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AUD 12.036
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Single1200 V1.85 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
STGP3NC120HD


STMicroelectronics IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar
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STMicroelectronics 33
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AUD 2.8045
Multiples of: 1

Single 2.2 V20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 C900 - 1300V Igbts
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