About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW38IH130D


Trans IGBT Chip N-CH 1.3KV 63A 3-Pin(3+Tab) TO-247 Tube
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STMicroelectronics 485
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AUD 5.2876
Multiples of: 1

Single        Rail/Tube      
STGP30H60DF


STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 485
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AUD 2.18
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Single600 V2.4 V20 V60 A250 nA  TO - 220Tube Through Hole260 W- 40 C+ 175 C600 - 650V Igbts
STGW28IH125DF


STMicroelectronics IGBT Transistors 1250V 25A trench gate field-stop IGBT
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STMicroelectronics 469
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AUD 3.3938
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Single1.25 kV2.65 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGWA40H65DFB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
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STMicroelectronics 428
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AUD 4.7159
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Single650 V1.6 V20 V80 A+/- 250 nA  TO - 247 - 3 SiThrough Hole283 W- 55 C+ 175 CStgwa40h65dfb
STGWT30V60DF


STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 415
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AUD 2.772
Multiples of: 1

Single600 V2.35 V20 V60 A250 nA  TO - 3PTubeSiThrough Hole258 W- 55 C+ 175 C600 - 650V Igbts
STGWA80H65DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics 415
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AUD 8.8734
Multiples of: 1

Single650 V2 V+/- 20 V120 A250 nA  TO - 247 - 3 SiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
STGWA50IH65DF


IGBT Transistors Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series
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STMicroelectronics 388
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AUD 4.134
Multiples of: 1

Single650 V1.5 V20 V100 A250 nA  TO - 247 - 3 SiThrough Hole300 W  Stgwa50ih65df
STGF10M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss
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STMicroelectronics 339
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AUD 0.9079
Multiples of: 1

Single650 V1.8 V+/- 20 V20 A+/- 250 uA  TO - 220FP - 3  Through Hole30 W- 55 C+ 175 CStgf10m65df2
STGP20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics 339
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AUD 1.4
Multiples of: 1

Single600 V2.2 V20 V40 A250 nA  TO - 220 - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
STGW80H65DFB


IGBT Transistors Trench gte FieldStop IGBT 650V 80A
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STMicroelectronics 174
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AUD 7.76
Multiples of: 30

Single650 V1.6 V20 V120 A250 nA469 W TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 CStgw80h65dfb
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