About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW20V60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 32
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AUD 3.22
Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 247Tube Through Hole167 W- 55 C+ 175 C600 - 650V Igbts
STGWT40HP65FB


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
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STMicroelectronics 29
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AUD 3.56
Multiples of: 1

Single650 V1.6 V+/- 30 V80 A+/- 250 nA  TO - 3P - 3 SiThrough Hole283 W- 55 C+ 175 C 
STGYA75H120DF2


IGBT Transistors Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT
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STMicroelectronics 29
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AUD 18.5546
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STGWA75M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics 28
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AUD 9.9508
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Single650 V1.65 V20 V120 A+/- 250 uA  TO - 247 - 3 SiThrough Hole488 W- 55 C+ 175 CStgwa75m65df2
STGWA75H65DFB2


IGBT Transistors Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT
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STMicroelectronics 25
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AUD 7.12
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STGF10NC60KD


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics 24
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AUD 1.3922
Multiples of: 1

Single600 V2 V+/- 20 V 100 nA25 W TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 CStgf10nc60kd
STGF30M65DF2


IGBT Transistors Trench gate field-stop IGBT M series 650 V 30 A low loss
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STMicroelectronics 24
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AUD 2.6169
Multiples of: 1

Single650 V1.55 V20 V60 A+/- 250 uA  TO - 220FP - 3 SiThrough Hole38 W- 55 C+ 175 CStgf30m65df2
STGWA15H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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STMicroelectronics 24
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AUD 4.58
Multiples of: 1

Single1200 V2.5 V20 V30 A+/- 250 nA    SiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
STGW40V60DF


STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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STMicroelectronics 24
Ships to you
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AUD 5.924
Multiples of: 1

Single600 V2.35 V20 V80 A250 nA  TO - 247Tube Through Hole283 W- 55 C+ 175 C600 - 650V Igbts
STGW40H65FB


IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
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STMicroelectronics 23
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AUD 3.3704
Multiples of: 1

Single650 V1.6 V20 V80 A250 nA283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40h65fb
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