About IGBT Transistors

Microchip IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT45GR65B2DU30


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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AUD 8.2308
Multiples of: 1

         TubeSi     
APT15GP60BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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AUD 8.2308
Multiples of: 1

      250 W   POWER MOS 7®, PT     
APT50GT60BRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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AUD 8.3014
Multiples of: 1

Single600 V2 V30 V110 A120 nA  TO - 247 - 3TubeSiThrough Hole446 W- 55 C+ 150 C 
APT50GS60BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single
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AUD 8.3022
Multiples of: 1

Single600 V2.8 V30 V93 A100 nA  TO - 247 - 3TubeSiThrough Hole415 W- 55 C+ 150 C 
APT44GA60B


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
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AUD 8.4329
Multiples of: 1

Single600 V +/- 30 V78 A+/- 100 nA  TO - 247 - 3 SiThrough Hole337 W- 55 C+ 150 C 
APT70GR65B


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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AUD 8.9589
Multiples of: 1

      595 W   NPT, POWER MOS 8®     
APT70GR65B2DU40


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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AUD 9.1604
Multiples of: 1

         TubeSi     
APT45GR65BSCD10


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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AUD 9.1714
Multiples of: 1

         TubeSi     
APT25GN120BG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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AUD 9.9086
Multiples of: 1

      272 W   Field Stop     
APT36GA60BD15


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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AUD 10.1857
Multiples of: 1

      290 W   POWER MOS 8®, PT     
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