About IGBT Transistors

Microchip IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT45GP120BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip 28
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AUD 27.4054
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Single1.2 kV3.3 V30 V100 A100 nA  TO - 247 - 3TubeSiThrough Hole625 W- 55 C+ 150 C 
APT75GN120JDQ3


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip 28
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AUD 51.8385
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Single1.2 kV1.7 V30 V124 A600 nA  SOT - 227 - 4BulkSiSmd/Smt379 W- 55 C+ 150 C 
APT40GP60B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 26
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AUD 24.5385
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      543 W   POWER MOS 7®, PT     
APT35GP120B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 25
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AUD 111.36
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      543 W   POWER MOS 7®, PT     
APT45GP120B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 23
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AUD 29.5462
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Single1.2 kV3.3 V30 V113 A100 nA  T - MAX - 3TubeSiThrough Hole625 W- 55 C+ 150 C 
APT13GP120BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 21
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AUD 9.9962
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      250 W   POWER MOS 7®, PT     
APT40GT60BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Microchip 19
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AUD 10.7885
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Single600 V2 V30 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole345 W- 55 C+ 150 C 
APT30GP60BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip 15
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AUD 12.2849
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         TubeSi     
APT65GP60L2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 11
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AUD 36.7817
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      833 W   POWER MOS 7®, PT     
APT65GP60B2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip 8
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AUD 31.5385
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      833 W   POWER MOS 7®, PT     
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