Microchip IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT15GT120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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AUD 4.9067

Multiples of: 1

         TubeSi     
APT30GT60BRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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AUD 5.0847

Multiples of: 1

Single       TO - 247 - 3TubeSiThrough Hole    
APT20GT60BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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AUD 5.3172

Multiples of: 1

          Si     
APT15GT60BRDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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AUD 6.1731

Multiples of: 1

Single        TubeSi     
APT20GN60BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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AUD 6.7846

Multiples of: 1

      136 W   Field Stop     
APT45GR65B


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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AUD 6.8469

Multiples of: 1

Single650 V1.9 V30 V118 A250 nA  TO - 247 - 3TubeSiThrough Hole543 W- 55 C+ 150 C 
APT15GT120BRDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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6 to 16 Weeks Calender.png

AUD 7.0683

Multiples of: 3

Single1.2 kV3.2 V30 V36 A480 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
APT15GT60BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 7.6111

Multiples of: 140

                
APT30GT60BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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AUD 7.68

Multiples of: 1

Single600 V2 V30 V64 A100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
APT50GT60BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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AUD 7.7612

Multiples of: 1

         TubeSi     
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