IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 400 DS Available Repetitive Avalanche Rated R ( )V = 10 V 3.6 DS(on) GS RoHS* Q (Max.) (nC) 17 Fast Switching COMPLIANT g Q (nC) 3.4 gs Ease of Paralleling Q (nC) 8.5 gd Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D S G commercial-industrial applications at power dissipation N-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF710PbF Lead (Pb)-free SiHF710-E3 IRF710 SnPb SiHF710 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 20 GS T = 25 C 2.0 C Continuous Drain Current V at 10 V I GS D T = 100 C 1.2 A C a Pulsed Drain Current I 6.0 DM Linear Derating Factor 0.29 W/C b Single Pulse Avalanche Energy E 120 mJ AS a Repetitive Avalanche Current I 2.0 A AR a Repetitive Avalanche Energy E 3.6 mJ AR Maximum Power Dissipation T = 25 C P 36 W C D c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 52 mH, R = 25 , I = 2.0 A (see fig. 12). DD J g AS c. I 2.0 A, dI/dt 40 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91041 www.vishay.com S11-0508-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF710, SiHF710 Vishay Siliconix THERMAL RESISTANCE PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -3.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V /T -0.47 - V Temperature Coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.2 A -- 3.6 DS(on) GS D b Forward Transconductance g V = 50 V, I = 1.2 A 1.0 - - S fs DS D Dynamic Input Capacitance C -170 - iss V = 0 V, GS Output Capacitance C -3V = 25 V, 4- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -6.3- rss Total Gate Charge Q -- 17 g I = 2.0 A, V = 320 V D DS Gate-Source Charge Q --V = 10 V 3.4 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --8.5 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t V = 200 V, I = 2.0 A, -9.9 - r DD D ns R = 24 , R = 95 g D Turn-Off Delay Time t -21- d(off) b see fig. 10 Fall Time t -11- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 2.0 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 6.0 S SM b Body Diode Voltage V T = 25 C, I = 2.0 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 240 540 ns rr T = 25 C, I = 2.0 A, J F b dI/dt = 100 A/s Body Diode Reverse Recovery Charge Q - 0.85 1.6 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91041 2 S11-0508-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000