Product Information

2N7002G-AE2-R

2N7002G-AE2-R electronic component of Unisonic

Datasheet
MOSFET N Trench 60V 300mA 2.5V @ 250uA 7.5 Ω @ 300m,10V SOT-23-3 RoHS

Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

20: AUD 0.0393 ( AUD 0.04 Inc GST) ea
Line Total: AUD 0.786 ( AUD 0.86 Inc GST)

36945 - Global Stock
Ships to you between
Mon. 29 Jul to Thu. 01 Aug
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
36436 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 20
Multiples : 20

Stock Image

2N7002G-AE2-R
Unisonic

20 : AUD 0.0393
200 : AUD 0.0318
600 : AUD 0.0276
3000 : AUD 0.0224
9000 : AUD 0.0206
21000 : AUD 0.0193

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
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Notes:- Show Stocked Products With Similar Attributes.

TechThe 2N7002G-AE2-R is a MOSFET transistor from Unisonic Technologies. It is made of a N-channel Trench MOSFET, that has a voltage rating of 60V, and a maximum drain current of 300mA. It has a drain-source break down voltage of 2.5V, and a drain-source On-state resistance of 7.5O at 300mA. This transistor also has a gate-source threshold voltage of 10V and is housed in a SOT-23-3 package type. Finally, this item is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Unisonic Tech
UTC(Unisonic Tech)

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