CSD19537Q3T is a MOSFET from Texas Instruments that is designed for high-side and low-side switching applications. It has a drain-source voltage of 30 V, a continuous drain current of 0.98 A, and a total power dissipation of 4.7 W. It features a low on-state resistance of 0.077 O and a fast switching speed of 20 ns. This MOSFET has an O-MESH passivation resulting in improved switching performance. It also features a TO-247-3 package that provides lower thermal resistance and higher reliability.