US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 z Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U01 zApplications Switching z Package specifications z Inner circuit (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 3000 US5U1 2 1 (1)Gate (2)Source (3)Anode (1) (2) (3) (4)Cathode 1 ESD protection diode (5)Drain 2 Body diode z Absolute maximum ratings (Ta=25C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage VGSS 12 V Continuous ID 1.5 A Drain current 1 Pulsed IDP 6.0 A Source current Continuous I 0.75 A S (Body diode) 1 Pulsed ISP 6.0 A 2 P Power dissipation D 0.7 W / ELEMENT Channel temperature Tch 150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board <Di> Parameter Symbol Limits Unit V 30 V Repetitive peak reverse voltage RM Reverse voltage VR 20 V 0.5 Forward current IF A 1 Forward current surge peak IFSM 2.0 A 2 Power dissipation PD 0.5 W / ELEMENT Junction temperature Tj 150 C 1 60Hz 1cycle 2 Mounted on ceramic board Rev.B 1/3 0.2Max.US5U1 Transistors <MOSFET and Di> Parameter Symbol Limits Unit 1 Total power dissipation PD 1.0 W / TOTAL Range of storage temperature Tstg 55 to +150 C 1 Mounted on a ceramic board z Electrical characteristics (Ta=25C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 0.5 1.5 V VDS= 10V, ID= 1mA 170 240 m I = 1.5A, V = 4.5V D GS Static drain-source on-state RDS (on) 180 250 m ID= 1.5A, VGS= 4V resistance 240 340 m ID= 1.5A, VGS= 2.5V Forward transfer admittance Y 1.5 SV = 10V, I = 1.5A fs DS D Input capacitance Ciss 80 pF VDS= 10V Output capacitance Coss 14 pF VGS=0V Reverse transfer capacitance C 12 pF f=1MHz rss Turn-on delay time td (on) 7 ns VDD 15V ID= 0.75A Rise time tr 9 ns VGS= 4.5V Turn-off delay time t 15 ns d (off) RL= 20 Fall time tf 6 ns RG=10 Total gate charge Qg 1.6 2.2 nC VDD 15V, VGS= 4.5V Gate-source charge Q 0.5 nC I = 1.5A gs D Gate-drain charge Qgd0.3 nC RL= 10, R G= 10 Pulsed <Body diode characteristics (Source-drain)> Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage VSD 1.2 V IS= 0.75A, VGS=0V <Di> Parameter Symbol Min. Typ. Max. Unit Conditions 0.36 V I = 0.1A S Forward voltage VF 0.47 V IS= 0.5A Reverse current IR 100 AIS= 20V Rev.B 2/3