Product Information

RW1E015RPT2R

RW1E015RPT2R electronic component of ROHM

Datasheet
MOSFET 4V Drive Pch MOSFET Drive Pch

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.7373 ( AUD 0.81 Inc GST) ea
Line Total: AUD 0.7373 ( AUD 0.81 Inc GST)

30176 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
26141 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.5838
10 : AUD 0.4812
100 : AUD 0.3273
1000 : AUD 0.1964
2500 : AUD 0.184
8000 : AUD 0.1628
24000 : AUD 0.1575
48000 : AUD 0.1539
96000 : AUD 0.1504

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Height
Length
Product
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

RW1E015RP Datasheet Pch -30V -1.5A Small Signal MOSFET llOutline SOT-563T V -30V DSS WEMT6 R (Max.) 160m DS(on) I 1.5A D P 0.7W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (WEMT6). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2R Marking UJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 0.7 W D Power dissipation *3 P 0.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160706 - Rev.001 Not Recommended for New Designs RW1E015RP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 179 /W thJA Thermal resistance, junction - ambient *3 R - - 292 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 115 160 GS D V = -4.5V, I = -0.7A - 170 240 GS D Static drain - source *4 R V = -4V, I = -0.7A - 190 270 m DS(on) GS D on - state resistance V = -10V, I = -1.5A GS D - 175 250 T = 125 j R Gate resistance f = 1MHz, open drain - 25 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (12200.8mm,Cu pad:240mm ) *4 Pulsed www.rohm.com 2/11 20160706 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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