Product Information

RV2C002UNT2L

RV2C002UNT2L electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.6723 ( AUD 0.74 Inc GST) ea
Line Total: AUD 0.6723 ( AUD 0.74 Inc GST)

14403 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
76 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 1
Multiples : 1
1 : AUD 0.7878
10 : AUD 0.6407
30 : AUD 0.5772
100 : AUD 0.4993
500 : AUD 0.4646
1000 : AUD 0.4445

14403 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.6723
10 : AUD 0.4671
100 : AUD 0.1928
1000 : AUD 0.1274
8000 : AUD 0.0902

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

RV2C002UN Datasheet Nch 20V 180mA Small Signal MOSFET llOutline DFN1006-3 V 20V DSS SC-101 R (Max.) 2.0 DS(on) VML1006 I 180mA D P 100mW D llFeatures llInner circuit 1) Low on - resistance. 2) High Power small mold Package (VML1006). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2L Marking RY llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 180 mA D *1 Pulsed drain current I 600 mA DP V Gate - Source voltage 10 V GSS *2 Power dissipation P 100 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160825 - Rev.001 RV2C002UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - - 1250 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 100A 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 150mA - 1.4 2.0 GS D V = 2.5V, I = 150mA - 1.7 2.6 GS D Static drain - source *3 R V = 1.8V, I = 150mA - 2.2 3.4 DS(on) GS D on - state resistance V = 1.5V, I = 20mA - 2.7 5.4 GS D V = 1.2V, I = 10mA - 3.8 11.4 GS D Forward Transfer *3 Y V = 10V, I = 150mA 110 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160825 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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