Product Information

RTF016N05FRATL

RTF016N05FRATL electronic component of ROHM

Datasheet
N-Channel 45V 1.6A (Ta) 800mW Surface Mount TUMT3

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

3000: AUD 0.3031 ( AUD 0.33 Inc GST) ea
Line Total: AUD 909.3 ( AUD 1000.23 Inc GST)

17319 - Global Stock
Ships to you between
Mon. 22 Jul to Fri. 26 Jul
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
6630 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.9872
10 : AUD 0.7732
100 : AUD 0.5715
500 : AUD 0.4759
1000 : AUD 0.3981
3000 : AUD 0.3432
9000 : AUD 0.3362
24000 : AUD 0.3291
45000 : AUD 0.3202

     
Manufacturer
Product Category
Package / Case
Packaging
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Rds On Max Id Vgs
Vgsth Max Id
Gate Charge Qg Max Vgs
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

RTF016N05FRA Datasheet Nch 45V 1.6A Small Signal MOSFET llOutline SOT-323T V 45V DSS TUMT3 R (Max.) 190m DS(on) I 1.6A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TL Marking PU llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 1.6 A D *1 I Pulsed drain current 6.4 A DP V Gate - Source voltage 12 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RTF016N05FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 1.6A - 140 190 GS D Static drain - source *4 R V = 4.0V, I = 1.6A - 150 210 m DS(on) GS D on - state resistance V = 2.5V, I = 1.6A - 200 280 GS D R Gate resistance f = 1MHz, open drain - 9.7 - G Forward Transfer *4 Y V = 10V, I = 1.6A 1.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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