Product Information

RSQ030N08HZGTR

RSQ030N08HZGTR electronic component of ROHM

Datasheet
MOSFET 80V N-CHANNEL 80A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 1.1818 ( AUD 1.3 Inc GST) ea
Line Total: AUD 1.1818 ( AUD 1.3 Inc GST)

25717 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 1
Multiples : 1
1 : AUD 1.1427
10 : AUD 0.9683
30 : AUD 0.8733
100 : AUD 0.7656
500 : AUD 0.7182
1000 : AUD 0.6964

25717 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 1.1818
10 : AUD 0.9253
100 : AUD 0.7325
500 : AUD 0.6334
1000 : AUD 0.5538
3000 : AUD 0.5025
6000 : AUD 0.4883
9000 : AUD 0.4812
24000 : AUD 0.4724

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Hts Code
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

RSQ030N08HZG Datasheet Nch 80V 3.0A Small Signal MOSFET llOutline SOT-457T V 80V DSS SC-95 R (Max.) 131m DS(on) TSMT6 I 3.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking PJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 80 V DSS I Continuous drain current 3.0 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190122 - Rev.002 RSQ030N08HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 80 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 81.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 80V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -4.4 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 3.0A - 93 131 GS D Static drain - source *4 R V = 4.5V, I = 3.0A - 100 140 m DS(on) GS D on - state resistance V = 4.0V, I = 3.0A - 103 145 GS D R Gate resistance f = 1MHz, open drain - 7.0 - G Forward Transfer *4 Y V = 10V, I = 3.0A 2.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190122 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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