Product Information

RS1L120GNTB

RS1L120GNTB electronic component of ROHM

Datasheet
N-Channel 60 V 12A (Ta), 36A (Tc) 3W (Ta) Surface Mount 8-HSOP

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 3.0429 ( AUD 3.35 Inc GST) ea
Line Total: AUD 3.0429 ( AUD 3.35 Inc GST)

15339 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14753 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 2.4946
10 : AUD 2.1231
100 : AUD 1.748
250 : AUD 1.633
500 : AUD 1.5056
1000 : AUD 1.311
2500 : AUD 1.2986
5000 : AUD 1.2898
10000 : AUD 1.2597

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

RS1L120GN Datasheet Nch 60V 36A Power MOSFET llOutline V 60V DSS R (Max.) 12.7m DS(on) HSOP8 I 36A D P 27W D llInner circuit llFeatures 1) Low on - resistance 2) High power package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS1L120GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 T = 25C I 36 A c D Continuous drain current T = 25C I 12 A a D *2 I Pulsed drain current 48 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 12 A AS *3 E Avalanche energy, single pulse 10 mJ AS *1 P 27 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.005 RS1L120GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 4.6 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 10 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = V , I = 200A 1.3 - 2.7 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 12A - 9.3 12.7 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 12A - 13.4 19.8 GS D R Gate resistance f=1MHz, open drain - 1.7 - G Forward Transfer *5 Y V = 5V, I = 12A 12 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.005 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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