Product Information

RS1E220ATTB1

RS1E220ATTB1 electronic component of ROHM

Datasheet
MOSFET PCH -30V -76A POWER

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 4.6746 ( AUD 5.14 Inc GST) ea
Line Total: AUD 4.6746 ( AUD 5.14 Inc GST)

25249 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7288 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 3.9277
10 : AUD 3.3438
100 : AUD 2.7423
250 : AUD 2.5831
500 : AUD 2.3708
1000 : AUD 2.0523
2500 : AUD 2.0523
5000 : AUD 1.9992

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

RS1E220AT Datasheet Pch -30V -76A Power MOSFET llOutline V -30V DSS R (Max.) 4.1m DS(on) HSOP8 I 76A D P 34W D llInner circuit llFeatures 1) Low on - resistance 2) Small Surface Mount Package (HSOP8) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB1 Marking RS1E220AT llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS *1 T = 25C I 76 A c D Continuous drain current T = 25C I 22 A a D *2 I Pulsed drain current 88 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse -22 A AS *3 E Avalanche energy, single pulse 74 mJ AS *1 P 34 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/10 20180328 - Rev.001 RS1E220AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 3.67 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -25 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = V , I = -2mA -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -22A - 3.3 4.1 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -22A - 4.6 5.8 GS D R Gate resistance f=1MHz, open drain - 3.4 - G Forward Transfer *5 Y V = -5V, I = -22A 25 - - S fs DS D Admittance *1 T = 25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.2mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20180328 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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