RRH100P03 Pch -30V -10A Power MOSFET Datasheet lOutline (5) V SOP8 -30V DSS (6) (7) (8) R (Max.) 12.6mW DS(on) (4) I -10A D (3) (2) P 2.0W D (1) lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) Built-in G-S Protection Diode. (2) Source (6) Drain (3) Source (7) Drain (4) Gate (8) Drain 3) Small Surface Mount Package (SOP8). 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 12 DC/DC Converter Type Basic ordering unit (pcs) 2,500 Taping code TB Marking RRH100P03 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V -30 DSS *1 Continuous drain current I 10 A D *2 Pulsed drain current A I 40 D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse E 0.8 mJ AS *4 2.0 W P D Power dissipation *5 P 0.65 W D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2017.08 - Rev.D 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.C 1/11Datasheet RRH100P03 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - ambient R - - 62.5 C/W thJA *5 Thermal resistance, junction - ambient R - - 192 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V Breakdown voltage I = -1mA (BR)DSS D - -25 - mV/C temperature coefficient T referenced to 25C j I V = -30V, V = 0V Zero gate voltage drain current - - -1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = -10V, I = -1mA Gate threshold voltage -1.0 - -2.5 V GS (th) DS D V I = -1mA Gate threshold voltage (GS)th D - 3.9 - mV/C temperature coefficient T referenced to 25C j V = -10V, I = -10A - 9.0 12.6 GS D V = -4.5V, I = -5A - 12.5 17.5 GS D Static drain - source *6 R m W DS(on) on - state resistance V = -4.0V, I = -5A - 14.0 19.6 GS D V = -10V, I = -10A, T =125C - 14.0 20.0 GS D j R Gate input resistannce f = 1MHz, open drain - 3.0 - W G *6 Transconductance V = -10V, I = -10A 13 26 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 L 10mH, V = -15V, Rg = 25 W, starting T = 25C DD j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (20200.8mm) www.rohm.com 2017.08 - Rev.D 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.C 2/11