Product Information

RQ6P015SPTR

RQ6P015SPTR electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.7734 ( AUD 0.85 Inc GST) ea
Line Total: AUD 0.7734 ( AUD 0.85 Inc GST)

1576 - Global Stock
Ships to you between
Mon. 29 Jul to Thu. 01 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1576 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 1
Multiples : 1
1 : AUD 0.7734
10 : AUD 0.6148
30 : AUD 0.5483
100 : AUD 0.4646
500 : AUD 0.4272
1000 : AUD 0.404

27877 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 1.1358
10 : AUD 0.9908
100 : AUD 0.7006
500 : AUD 0.6033
1000 : AUD 0.5272
3000 : AUD 0.4777
6000 : AUD 0.4653
9000 : AUD 0.4512
24000 : AUD 0.4476

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

RQ6P015SP Datasheet Pch -100V -1.5A Small Signal MOSFET llOutline SOT-457T V -100V DSS TSMT6 R (Max.) 470m DS(on) I 1.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT6). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking FC llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -100 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160708 - Rev.003 RQ6P015SP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -100 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -91.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -100V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 350 470 GS D V = -4.5V, I = -0.75A - 380 510 GS D Static drain - source *4 R V = -4.0V, I = -0.75A - 400 540 m DS(on) GS D on - state resistance V = 10V, I = 1.5A GS D - 610 - T = 125 j R Gate resistance f = 1MHz, open drain - 8.5 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160708 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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