Product Information

RQ6E050ATTCR

RQ6E050ATTCR electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.598 ( AUD 0.66 Inc GST) ea
Line Total: AUD 0.598 ( AUD 0.66 Inc GST)

25308 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25308 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.598
10 : AUD 0.5202
100 : AUD 0.4069
500 : AUD 0.3609
1000 : AUD 0.3255
3000 : AUD 0.299
9000 : AUD 0.2972
24000 : AUD 0.2937
45000 : AUD 0.2866

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

RQ6E050AT Datasheet Pch -30V -5A Power MOSFET llOutline TSMT6 V -30V DSS R (Max.) 27m DS(on) I 5.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT6). 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCR Marking VB llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS *1 I Continuous drain current 5.0 A D *2 I Pulsed drain current 18 A D,pulse V Gate - Source voltage 20 V GSS *3 E Avalanche energy, single pulse 18.2 mJ AS *3 I Avalanche current -5.0 A AS *4 P Power dissipation 1.25 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2014 ROHM Co., Ltd. All rights reserved. 20140415 - Rev.003 RQ6E050AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - ambient - 100 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -5A - 21 27 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -5A - 29 38 GS D *5 g Transconductance V = -5V, I = -5A 5.0 - - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 1mH, V = -15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic boad (30300.8mm) *5 Pulsed www.rohm.com 2/11 20140415 - Rev.003 2014 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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